ldos-opt · Shaker et al. reproduction

3D SiN thin slab running

3D octant Maxwell · z-dipole · 1 μm gap (|x|<0.5 λ₀) · Si₃N₄ slab t=0.1923 λ₀ (2 cells / half) · design |x|≤2.45, |y|≤0.67 · dof=120064 · crystal a=0.35 · A-a35 fab (R=0.1, λ=3.0, Δη=0.25).

3d-sin-thin · unshifted β=8.0 · updated

LDOS / vacuum

2.231

best 2.231 · target ≥ 500

24.53

best 25.79 · target ≥ 50,000

Iteration

6 factorizations

Re ω*/ω0

wall 1.247e+03 s

Length-scale P

0.6124

λ = 3 · erode/dilate

Seed LDOS/vac=1.569. Starting unshifted.

permittivity — ε(x,y), source as red/white dot. Red band is the frozen vacuum strip when present.

field — |E|² at the evaluation frequency

fragile band — Fragile band ρ_dilate − ρ_erode. Speckle lights up; a clean interface is a thin outline.

history — LDOS enhancement, Q, and length-scale penalty vs Maxwell-matrix factorizations