Air-start variable-oxide-width atom-strip Q/V optimizer

Air-start variable-oxide-width atom-strip Q/V optimizer#

Worker: deliberately not started · stage: prepared · status: ready_for_user_authorization

This fresh campaign is fully prepared while the current density-0.5 optimizer continues untouched. It uses the same 16 × 2 µm topology region, y-oriented atom, one-micron immutable air strip, XYZ symmetry, exact temporal discovery, tracked-pole Q/V objective, component-aware Yee operator, adaptive trust controller, plateau-driven stage handoffs, gradual beta continuation, and topology-free smooth-boundary endpoint.

prepared quantity

value

trainable SiN topology initialization

density 0 (air start)

fixed feedthrough pin

exact SiN, index 2.0

SiO2 material

exact index 1.44

initial SiN thickness

0.100 µm

initial SiO2 thickness

0.300 µm per side

initial SiO2 full width

1.800 µm

SiO2 full-width range

0.600–2.000 µm

material discretization

component-aware Yee

spatial filter

none

snapshot cadence

every 50 accepted updates

scheduled stop

none

Material architecture#

The SiO2 guide is not represented by a second gray density field. It has only smooth analytic width and thickness coordinates and therefore remains exact SiO2 in its bulk and exact air outside its boundary. The SiN core alone has a 2-D freeform density plus a thickness coordinate. The hard atom strip overrides both materials.

This separation removes the ambiguous question of how one projected scalar should choose among air, SiO2, and SiN. During binarization, beta acts only on SiN occupancy. The oxide width/thickness remain analytic subpixel boundaries; their gray cut cells are physical boundary averages, not unfinished material.

Prepared stage sequence#

  1. Air-start raw Adam optimizes the exact absolute atom-field temporal trace; all three analytic dimensions are frozen.

  2. After temporal convergence and trustworthy Q≥100, adaptive-trust L-BFGS-B optimizes direct atom-local Q/V using only raw SiN pixels.

  3. At the pixel-only Q/V plateau, SiN thickness, SiO2 thickness, and SiO2 width become trainable together. Gradual fixed-beta continuation begins, with Q/V still the sole objective.

  4. At binary readiness and a fixed-beta Q/V plateau, the SiN topology moves to a topology-free cubic-spline phase field. The analytic oxide boundaries remain analytic and joint Q/V optimization continues indefinitely.

Once launched, this page will be replaced automatically by the live dashboard with Q, V, Q/V, Purcell, pole wavelength, fit quality, ideal/measured temporal traces, geometry/difference, fields, trust state, beta, and all three physical dimensions.

The exact campaign methodology is already stored with the campaign code and will be attached here automatically at launch.